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IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

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IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

Name: IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF
Brand: INFINEON/IR
Price: 1 USD

China IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF wholesale

Brand Name : INFINEON/IR

Model Number : IRGB10B60KDPBF

Certification : CE/ RoHS

Place of Origin : Germany

MOQ : 5-10pcs

Price : To be negotiated

Payment Terms : T/T, Western Union,paypal

Supply Ability : 10,000PCS

Delivery Time : in stock 2-3days

Packaging Details : Tube

PN : IRGB10B60KDPBF

Brand : INFINEON/IR

Original : Germany

Type : Insulated Gate Bipolar Transistor Ultrafast Soft Recovery Diode

Voltage : IGBT 600V 22A 156W

Package : TO220AB

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IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT

600V 22A 156W TO220AB

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• Low Diode VF.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive VCE (on) Temperature Coefficient.

• Lead-Free

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

Part Number	IRGB10B60KDPBF
Manufacturer	Infineon
Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer	Infineon
Packaging	Tube
Original	Germany
Part Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	22A
Current - Collector Pulsed (Icm)	44A
Vce(on) (Max) @ Vge Ic	2.2V @ 15V 10A
Power - Max	156W
Switching Energy	140µJ (on) 250µJ (off)
Input Type	Standard
Gate Charge	38nC

IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

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Product Tags:

156W Insulated Gate Bipolar Transistor

22A Insulated Gate Bipolar Transistor

IGBT Bipolar Recovery Diode

IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF Images

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